2010

[23]. Effect of Metal Ions on Switching Performances of Polyfluorene-based Organic Non-volatile Memory Devices
T.-W. Kim, S.-H. Oh, H. Choi, J. Lee, G. Wang, J. Park, D.-Y. Kim, H. Hwang and T. Lee*
Org. Electron.  11, 109-114 (2010)

[22]. Three-Dimensional Integration of Organic Resistive Memory Devices

S. Song, B. Cho, T.-W. Kim, Y. Ji, M. Jo, G. Wang, M. Choe, Y. H. Kahng, H. Hwang, and T. Lee*

Adv. Mater.  22, 5048-5052 (2010) *Front Cover Picture

[21]. Tuning of a Graphene-Electrode Work Function to Enhance the Efficiency of Organic Bulk Heterojunction Photovoltaic Cells with an Inverted Structure

G. Jo, S.-I. Na, S.-H. Oh, S. Lee, T.-S. Kim, G. Wang, M. Choe, W. Park, J. Yoon, D.-Y. Kim, Y. Ho Kahng, and T. Lee*

Appl. Phys. Lett.  213301 (2010) *Selected as one of APL's monthly top 20 most-downloaded articles in 2010 November.

[20]. Tuning of the Electronic Characteristics of ZnO Nanowire Field Effect Transistors by Proton Irradiation

W.-K. Hong, G. Jo, J. I. Sohn, W. Park, M. Choe, G. Wang, Y. H. Kahng, M. E. Welland, and T. Lee*

 ACS Nano.  4, 811–818 (2010)

[19]. Electrical Properties of ZnO Nanowire Field Effect Transistors with Varying High-k Al2O3 Dielectric Thickness

M. Choe, G. Jo, J. Maeng, W.-K. Hong, M. Jo, G. Wang, W. Park, B. Lee, H. Hwang, and T. Lee*

J. Appl. Phys. 107, 034504 (2010) *This article was selected in Virtual Journal of Nanoscale Science & Technology, Vol. 21, Issue 8 (02. 22, 2010)

[18]. Effect of Ag Nanoparticles on Resistive Switching of Polyfluorene based Organic Non-Volatile Memory Devices

T.-W. Kim, S.-H. Oh, H. Choi, G. Wang, D.-Y. Kim, H. Hwang and T. Lee*

J. Kor. Phys. Soc.  56, 128 (2010)

2009

[17]. Enhancement of Field Emission Transport by Molecular Tilt Configuration in Metal-Molecule-Metal Junction
G. Wang, T.-W. Kim, G. Jo, and T. Lee*
J. Am. Chem. Soc.  131, 5980-5985 (2009)

*Introduced at NanoWeekly, No. 311

[16]. Statistical Analysis of Metal-Molecule Contacts in Alkyl Molecular Junctions: Sulfur vs Selenium End-Group

H. Yoo, J. Choi, G. Wang, T.-W. Kim, J. Noh, and T. Lee*

J. Nanosci. Nanotech.  9, 7012-7015 (2009)

[15]. Unipolar Nonvolatile Memory Devices with Composites of Poly(9-vinylcarbazole) and Titanium Dioxide Nanoparticles

B. Cho, T.-W. Kim, M. Choe, G. Wang, S. Song, and T. Lee*

Org. Electron. 10, 473 (2009)

[14]. Electrical Conduction through Self-Assembled Monolayers in Molecular Junctions: Au/molecules/Au versus Au/molecule/PEDOT:PSS/Au

G. Wang, H. Yoo, S.-I. Na, T.-W. Kim, B. Cho, D.-Y. Kim, and T. Lee*

Thin Solid Films, 518, 824 (2009)

 

[13]. One Transistor–One Resistor Devices for Polymer Non-Volatile Memory Applications

T.-W. Kim, H. Choi, S.-H. Oh, G. Wang, D.-Y. Kim, H. Hwang, and T. Lee*

Adv. Mater. 21, 2497 - 2500 (2009) *Inside Cover Picture

[12]. Resistive Switching Characteristics of Polymer Non-volatile Memory Devices in a Scalable Via-hole Structure

T.-W. Kim, H. Choi, S.-W. Oh, M. Jo, G. Wang, B. Cho, D.-Y. Kim, H. Hwang and T. Lee*

Nanotechnology,  20, 025201 (2009)

*Downloaded more than 200 times by February 9, 2009. 

*Selected as one of Nanotechnology highlights 2009 (one of six chosen papers in Electronics and Photonics field)

[11]. Evolution of nanomorphology and anisotropic conductivity in solvent-modified PEDOT:PSS films for polymeric anodes of polymer solar cells

Seok.-In. Na, G. Wang, S.-S. Kim, T.-W. Kim, S.-H. Oh, B.-K. Yu, T. Lee and D.-Y. Kim*

J. Mater. Chem.  19, 9045-9053 (2009)

[10]. Tuning of operation mode of ZnO nanowire field effect transistors by solvent-driven surface treatment

W. Park, W.-K. Hong, G. Jo, G. Wang, M. Choe, J. Maeng, Y. Ho Kahng and T. Lee*

Nanotechnology, 20, 475702 (2009)

2008

[09]. A direct Metal Transfer method for Cross-bar type Polymer Non-volatile Memory Applications
T.-W. Kim, K. Lee, S.-H. Oh, G. Wang, D.-Y. Kim, G.-Y. Jung, and T. Lee*
 Nanotechnology, 19, 405201 (2008)

[08]. Effects of Metal-Molecule Contact and Molecular Structure on Molecular Electronic Conduction in Nonresonant Tunneling Regime: Alkyl versus Conjugated Molecules

G. Wang, T.-W. Kim, Y. H. Jang, and T. Lee*

J. Phys. Chem. C,  112, 13010 (2008)

[07]. Reversible Switching Characteristics of Polyfluorene-Derivative Single Layer Film for Non-Volatile Memory Devices
T.-W. Kim, S.-H. Oh, H. Choi, G. Wang, D.-Y. Kim, H. Hwang, and T. Lee*
Appl. Phys. Lett. 92, 253308 (2008)

[06]. Structural and Electrical Characterization of Intrinsic N-type In2O3 Nanowire

G. Jo, W.-K. Hong, J. Maeng, T.-W. Kim, G. Wang, A. Yoon, S.-S. Kwon, S. Song, and T. Lee*

Colloids Surf., A, 313-314, 308-311 (2008)

[05]. Reliable Organic Non-Volatile Memory Device using Polyfluorene-derivative Single Layer Film
T.-W. Kim, S.-H. Oh, H. Choi, G. Wang, H. Hwang, D.-Y. Kim and T. Lee*
IEEE Elect. Dev. Lett. 29, 852 (2008)

[04]. Statistical Analysis of Electronic Transport through Chemisorbed versus Physisorbed Alkanethiol Self-Assembled Monolayers

T.-W. Kim, G. Wang, and T. Lee*

IEEE Trans. Nanotech. 7, 140-144 (2008)

2007

[03]. Influence of Metal-MoleculeContacts on Decay Coefficients and Specific Contact Resistances in Molecular Junctions
G. Wang, T.-W. Kim, H. Lee, and T. Lee*
Phys. Rev. B, 76, 205320 (2007)

*This article was selected in Virtual Journal of Nanoscale Science & Technology, Vol. 16, Issue 23 (Dec. 3, 2007).

[02]. Statistical Analysis of Electronic Properties of Alkanethiols in Metal-Molecule-Metal Junctions

T.-W. Kim, G. Wang, H. Lee, and T. Lee*

Nanotechnology, 18, 315204 (2007)

2006

[01]. Charge Transport of Alkanethiol Self-Assembled Monolayers in Micro-Via Hole Devices
T.-W. Kim, G. Wang, H. Song, N.-J. Choi, H. Lee, and T. Lee*
J. Nanosci. Nanotechnol.  6, 3487–3490 (2006).