2021
J. Jang*, S. Jang, S. Choi, and G. Wang*
Scientific Reports, 11, 895 (2021)
![[72]_Scientifc report.JPG](https://static.wixstatic.com/media/27ecc3_32c916c783a940ffab0261de50ca8e0a~mv2.jpg/v1/fill/w_479,h_262,al_c,q_80,usm_0.66_1.00_0.01/%5B72%5D_Scientifc%20report_JPG.jpg)
[73]. Energy-efficient three-terminal SiOx memristor crossbar array enabled by vertical Si/graphene heterojunction barristor
S. Choi†, J.-W. Choi†, J. C. Kim, H. Y. Jeong, J. Shin, S. Jang, S. Ham, N.-D. Kim, and G. Wang*
Nano Energy, accepted (2021)
[74]. Unipolar Nonvolatile Memory using Two-dimensional Vertically Stacked Layered Double Hydroxide
H. Cho, C.-W. Jeon, B.-D. On, I.-K. Park, S. Choi, J. Jang* and G. Wang*
Adv. Elec. Inter., accepted (2021)
[75]. M. Kang et al., Nature Comm., submitted (2021)
[76]. J. Jang and G. Wang* et al, Nature Electronics, in revision (2021)
[77]. S. Jang and G. Wang* et al, invited review, in preparation
[78]. J. S. Eo, and G. Wang* et al, In preparation
[79]. S. Choi, and G. Wang* et al, In preparation
[80]. J. Shin, and G. Wang* et al, In preparation
[81]. J. Jang, and G. Wang* et al, In preparation
[82]. ...