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2024

[92]. Learning-Effective Mixed-Dimensional Halide Perovskite QD Synaptic Array for Self-rectifying and Luminous Artificial Neural Networks

Y. Park and G. Wang*

Adv. Funct. Mater. 34, 2307971 (2024) (*Front cover selected)

[93]. Tilt‐Engineered Molecular‐Scale Selector for Enhanced Learning in Artificial Neural Networks

J. S. Eo, J. Shin, T. Jeon, J. Jang*  and G. Wang

Adv. Funct. Mater. in press (2023)

[94]. 3D-integrated Multilayered Physical Reservoir Array for Learning and Forecasting Time-series Informtion

S. Choi, J. Shin, G. Park, J. S. Eo, J. Jang, J. J. Yang*and G. Wang

Nature Comm. 15, 2044 (2024)  (*Featured article selected in "Device")

[95]. Artificial neuromodulator-synapse mimicked by a three-terminal vertical organic ferroelectric barristor for fast and energy-efficient neuromorphic computing

S. Ham, J. Jang, D. Koo, S. Gi, D. Kim, S. Jang, N. D. Kim, S. Bae, B. Lee, C.-H. Lee, and G. Wang*

Nano Energy, 124, 109435 (2024)

[96]. Reversible Polarity Control in 2D MoTe2 Field-Effect Transistors for Complementary Logic Gate Applications

B.-S. Yu and D. K. Hwang* et al.,  

Adv. Funct. Mater. accepted (2024)

[97].Boltzmann switching MoS2 metal-semiconductor field-effect transistors enabled by monolithic-oxide-gapped metal gates at the Schottky-Mott limit

Y.-H. Kim and C.-H. Lee* et al.,  

Adv. Mater. accepted (2024)

[98]. T. Jeon and J. S. Eo and G. Wang* et al,in preparation (2024)

[99]. G. Park and G. Wang* et al, in preparation (2024)

[100]. S. Choi and G. Wang* et al, in preparation (2024)

[101]. H. Cho  and G. Wang* et al, in preparation (2024)

[102]. Y. Park and G. Wang* et al, in preparation (2024)

2023

[86]. Active traffic signal decision using vector-matrix multiplication

J. JangT. Jeon, and G. Wang

Adv. Intel. Sys. 220228 (2023) 

[87]. Heterosynaptic MoS2 Memtransistors Emulating Biological Neuromodulation for Energy-Efficient Neuromorphic Electronics

W. Huh†, D. Lee†, S. Jang, J. H. Kang, T. H. Yoon, J.-P. So, Y. H. Kim, J. C. Kim, H.-G. Park, H. Y. Jeong, G. Wang and C.-H. Lee*

Adv. Mater. 35, 2211525 (2023) 

[88].Three-terminal Vertical Ferroelectric Synaptic Barristor enabled by HZO/graphene Heterostructure with Rebound Depolarization

S. Jang, Y. Kim, J. Jeon, S. Ham, S. Choi, J. Yang, S. K. Kim, S. Jeon., J. Jang*, and G. Wang*

J. Alloys Compd. 965, 25, 1712247 (2023)

[89]. Real-time finger motion recognition using skin-conformable electronics

H. Cho,  I. Lee, J. Jang, J.-H. Kim, H. Lee,  S. Park* and G. Wang* 

Nature Electronics. 6, 619-629 (2023)

News and views:  Human-machine interfaces, Integrated devices that can recognize hand gestures

Behind paper: A community from Springer Nature

 

[90]. Filament-free memristors for Computing

S. Choi, T. Moon, G. Wang, and J. Yang* 

Nano Convergence 10, 58 (2023) (*Invited review)

[91]. Recent Progress in Two-Terminal Memristors Utilizing Halide Perovskites and their Potential Applications

Y. Park and G. Wang* 

J. Flex. and Print. Elect. accepted (2023) (*Invited review, in the Korean language)

2022

[79]. Flexible neural network realized by the probabilistic SiOx memristive synaptic array for energy-efficient image learning

S. Choi, J. Jang, M. S. Kim, N.-D. Kim, J. Kwag and G. Wang*

Adv. Sci, 2104773 (2022)  

[80]. Integration of multiple electronic components on a microfiber toward emerging electronic textile platform

S. Hwang, M. Kang, A. Lee, S. Bae, S.-K. Lee, S. H. Lee, T. Lee, G. Wang and T.-W. Kim*  

Nature Com, 13 (1), 1-10 (2022) 

[81]. A learning-rate modulable and reliable TiOx memristor array for robust, fast, and accurate neuromorphic computing

J. Jang†, S. Gi†, I. Yeo, S. Choi, S. Jang, S. Ham, B. Lee* and G. Wang* 

Adv. Sci. 2201117 (2022) (†contributed equally to this work

 

[82]. Multiple switching modes of NiOx memristor for memory-driven multifunctional device applications

Y. ParkH. Choi, and G. Wang* 

ACS Appl. Elec. Mater.,  4, 7, 3739–3748 (2022)

[83]. Advances of various heterogeneous structure types in molecular junction systems and their charge transport properties

J. Shin,  J. E. Eo, T. Jeon, T. Lee* and G. Wang*  

Adv. Sci. 9, 2202399 (2022) (*review article) (*Back cover selected)

[84]. Molecular van der Waals heterojunction photodiodes enabling dipole-induced polarity switching

J. Shin, S. Yang, J. S. Eo, T. Jeon, J. Lee, C.-H. Lee*, and G. Wang

Small Methods, 6, 2200646 (2022) (*Back cover selected)

[85]. Ultra-Large Dynamic Range Synaptic Indium Gallium Zinc Oxide Transistors

T. Kwak, M-J. Kim, W-J. Lee, E. C. Kim, J. Jang, G. Wang, T.-W. Kim, Y. S. Kim, and S. Park*

Appl. Mater. Today. 9, 101648 (2022) 

2021

[72]. Run-off election-based decision method for the training and inference process in an artificial neural network (link)

J. Jang*, S. Jang, S. Choi, and G. Wang*

Scientific Reports, 11, 895 (2021)

[73]. Energy-efficient three-terminal SiOx memristor crossbar array enabled by vertical Si/graphene heterojunction barristor

S. Choi†, J.-W. Choi†, J. C. Kim, H. Y. Jeong, J. Shin, S. Jang, S. Ham, N.-D. Kim, and G. Wang*

Nano Energy, 84, 105947 (2021)

 

[74]. Transparent and unipolar nonvolatile memory using two-dimensional vertically stacked layered double hydroxide

H. Cho, C.-W. Jeon, B.-D. On, I.-K. Park, S. Choi, J. Jang* and G. Wang* 

Adv. Mater. Inter., 2001990 (2021) (*Front cover selected)

[75]. Tailoring the interfacial band offset by the molecular dipole orientation for a molecular heterojunction selector

J. S. Eo, J. Shin, S. Yang, T. Jeon, J. Lee, S. Choi, C.-H. Lee and G. Wang*

Adv. Sci. 2101390 (2021) (*Frontpiece selected)

 

[76]. Retina-Inspired Structurally Tunable Synaptic Perovskite Nanocones

K. Lee, H. Han, Y. Kim, J. Park, S. Jang, H. Lee, S. W. Lee, H.Y. Kim, Y.  Kim, T. Kim, D.  Kim, G. Wang, and C. Park*

Adv. Funct. Mater. 2105596 (2021) (*Front cover selected)

[77]. Controllable SiOx Nanorod Memristive Neuron for Probabilistic Bayesian Inference

S. Choi, G. S. Kim, J. Yang, H. Cho, C.-Y. Kang and G. Wang*

Adv. Mater. 34, 2104598 (2022) 

[78]. Bird-Inspired Self-Navigating Artificial Synaptic Compass

Y. Kim, K. Lee, J. Lee, S. Jang, H. Kim, H. Lee, S. W. Lee, G. Wang, and C. Park*

ACS Nano 15, 20116 (2021) 

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