A learning-rate modulable and reliable TiOx memristor array for robust, fast, and accurate neuromorphic computing

J. Jang†, S. Gi†, I. Yeo, S. Choi, S. Jang, S. Ham, B. Lee* and G. Wang* 

Adv. Sci. 2201117 (2022) (†contributed equally to this work) 

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Flexible neural network realized by the probabilistic SiOx memristive synaptic array for energy-efficient image learning

S. Choi, J. Jang, M. S. Kim, N.-D. Kim, J. Kwag and G. Wang*

Adv. Sci, 2104773 (2022))

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Controllable SiOx Nanorod Memristive Neuron for Probabilistic Bayesian Inference

S. Choi, G. S. Kim, J. Yang, H. Cho, C.-Y. Kang and G. Wang*

Adv. Mater. 34, 2104598 (2022) 

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Energy-efficient three-terminal SiOx memristor crossbar array enabled by vertical Si/graphene heterojunction barristor

S. Choi†, J.-W. Choi†, J. C. Kim, H. Y. Jeong, J. Shin, S. Jang, S. Ham, N.-D. Kim, and G. Wang*

Nano Energy, 84, 105947 (2021)

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Emerging Memristive Artificial Synapses and Neurons for Energy-Efficient Neuromorphic Computing

S. Choi, J. Yang, and G. Wang* 

Adv. Mater. 20044659 (2020) (*Invited Progress Report)

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Artificially Intelligent Tactile Ferroelectric Skin

K. Lee†, S. Jang†, K. L. Kim, M. Koo, C. Park, S. Lee, J. Lee, G. Wang* and C. Park*

Adv. Sci. 7, 2001662 (2020)

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One-dimensional organic artificial multi-synapses enabling electronic-textile neural network for wearable neuromorphic applications

S. Ham†, M. Kang†, S. Jang†, J. Jang, S. Choi, T.-W. Kim* and G. Wang* 

Science Adv. 6 : eaba1178 (2020)

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Photonic Organolead Halide Perovskite Artificial Synapse Capable of Accelerated Learning at Low Power Inspired by Dopamine-facilitated Synaptic Activity

S. Ham, S. Choi, H. Cho, S.-I. Na and G. Wang* 

Adv. Funct. Mater.  29, 1806646 (2019) 

 

Self-rectifying TaOy/Nanoporous TaOx Memristor Synaptic Array for Learning and Energy-efficient Neuromorphic Systems

S. Choi†, S. Jang†, J.-H. Moon, J. C. Kim, H. Y. Jeong, P. Jang, K.-J. Lee, and G. Wang*

NPG Asia Mater. 10, 1097–1106 (2018)

 

Synaptic barristor based on phase-engineered two-dimensional heterostructures
W. Huh†, S. Jang†, J. Y. Lee, D. Lee, D. Lee, J. M. Lee, H.-G. Park, J. C. Kim, H. Y. Jeong, G. Wang* and C.-H. Lee* 

Adv. Mater.  30, 1801447 (2018)

 

Controllable switching filaments prepared via tunable and well-defined single truncated conical nanopore structures for fast and scalable SiOx memory
S. Kwon, S. Jang, J.-W. Choi, S. Choi,  S.-J. Jang, T.-W. Kim* and G. Wang*
Nano Lett.  17, 7462–7470 (2017)

 

Three-Dimensional Networked Nanoporous Ta2O5-x Memory system for Ultrahigh Density Storage

G. Wang , J.-H. Lee , Y. Yang , G. Ruan , N. D. Kim , Y. Ji , and J. Tour*

Nano Lett. 5 (9), 6009-6014 (2015)

 

Nanoporous Silicon Oxide Memory

G. Wang, Y. Yang, J.-H. Lee, V. Abramova, H. Fei, G. Ruan, E. L. Thomas, and J. M. Tour *

Nano Lett.  14 (8), 4694–4699 (2014)

 

Conducting-Interlayer SiOx Memory Devices on Rigid and Flexible Substrates

G. Wang, A.-R. O. Raji, J.-H. Lee, and J. M. Tour*

ACS Nano,  1410–1418 (2014)

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High-Performance and Low-Power Rewritable SiOx 1 kbit One Diode-One Resistor (1D-1R) Crossbar Memory Array

G. Wang, A. C. Lauchner, J. Lin, D. Natelson, K. V. Palem, and J. M. Tour *

Adv. Mater. 25 (34), 4789-4793 (2013)

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Three-Dimensional Integration of Organic Resistive Memory Devices

S. Song, B. Cho, T.-W. Kim, Y. Ji, M. Jo, G. Wang, M. Choe, Y. H. Kahng, H. Hwang, and T. Lee*

Adv. Mater.  22, 5048-5052 (2010) 

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One Transistor–One Resistor Devices for Polymer Non-Volatile Memory Applications

T.-W. Kim, H. Choi, S.-H. Oh, G. Wang, D.-Y. Kim, H. Hwang, and T. Lee*

Adv. Mater. 21, 2497 - 2500 (2009)