2021-2022

KCS (2021), Virtual Conference, Jan. 25(Mon) - Jan. 29(Fri), 2021

  • J. S. Eo, J. Shin, G. Wang* "Molecular Selector Realized by Molecular Heterojunction with 2D semiconductors" (Oral)

  • S. Choi, G. S. Kim, H. Cho, J. Yang, C.-Y. Kang, and G. Wang* "SiOx Nanorod Memristor for Stochastic Artificial Neuron and its Application" (Oral)

  • S. Ham, M. Kang, S. Jang, J. Jang, S. Choi, T.-W. Kim, G. Wang* "One-dimensional artificial multi-synapses based on the organic ferroelectric transistor enabling electronic-textile neural network" (Poster)

  • J. Jang, S. Choi, G. Wang* "Hardware Implementation of Titanium Oxide Memristor Array for Neuromorphic Computing" (Oral)

  • S. Jang, K. Lee, K. Kim, M. Koo, C. Park, S. Lee, J. Lee, C. Park, G. Wang* "Development of a single-unit artificial tactile synapse for intelligent skin applications" (Poster)

NCC (2021), Virtual Conference, Jan. 19(Tue) - Jan. 20(Wed), 2021

  • J. S. Eo, J. Shin, G. Wang* "Molecular Selector Realized by Molecular Heterojunction with 2D semiconductors" (Oral, Best Oral Award)

  • S. Jang, K. Lee, K. L. Kim, M. Koo, C. Park, S. Lee, J. Lee, C. Park and G. Wang* "Development of a single device-based organic tactile synapse for artificial learning skin applications" (Oral)

2019-2020

Best Oral Awards: 7

Best Poster Awards: 8

The Korean Ceramic Society Fall Meeting (2020), Virtual/Hybrid Conference, Nov. 23(Mon)- Nov. 25(Wed), 2020

  • G. Wang "Ferroelectric Organic Artificial Synapse for Flexible Neuromorphic Electronics" (Invited talk)

KPS Fall Meeting (2020), Virtual Conference, Nov. 4 (Wed)- Nov. 6(Fri), 2020

  • J. S. Eo, J. Shin, G. Wang* "Realization of Sub-2nm Molecular Selector for Next-generation Memory Application" (Poster, Best Oral Award)

  • S. Choi, G. S. Kim, H. Cho, J. Yang, C.-Y. Kang, and G. Wang* "Nanorod-shaped SiOx Memristor for Stochastic Artificial Neuron and Computing Application" (Oral, Best Oral Award)

  • J. Jang, S. Choi, and G. Wang* "Highly reliable titanium oxide memristor array device for neuromorphic computing system" (Oral)

  • S. Ham, M. Kang, S. Jang, J. Jang, S. Choi, T.-W. Kim, G. Wang* "Fiber-shaped multi-synapses based on the organic ferroelectric transistor for wearable neuromorphic applications" (Poster)

  • J. Shin, S. Yang, Y. Jang, J. S. Eo, T.-W. Kim, T. Lee, C.-H. Lee, and G. Wang* "Highly Tunable Molecular Rectifier Realized by Interfacial Design in Molecular Heterojunction with Two-Dimensional Materials" (Poster)

  • S. Jang, K. Lee, K, Kim, M. Koo, C. Park, S. Lee, J. Lee, C. Park, and G. Wang* "Development of a single device-based organic tactile synapse for artificial learning skin applications" (Poster)

 

KPS Spring Meeting (2020), Virtual Conference, Jul. 13(Mon)- Jul. 15(Wed), 2020

  • G. Wang "Memristor synapses for low-power and high-performance neuromorphic computation " (Invited talk)

  • J. S. Eo, J. Shin, G. Wang* "Tunable rectification direction in molecular heterojunction with two-dimensional semiconductors" (Oral, Best Oral Award)

  • S. Choi, J.-W Choi, J. Shin, S. Jang, N.-D. Kim, J. Kwag and G. Wang* “SiOx Memristive Barristor Network Inspired by the Human Vision for Neuromorphic Computing" (Poster)

  • J. Shin, S. Yang, Y. Jang, J. S. Eo, T.-W. Kim, T. Lee, C.-H. Lee, and G. Wang* "Highly Tunable Molecular Rectifier Realized by Interfacial Design in Molecular Heterojunction with Two-Dimensional Materials" (Poster, Best Oral Award)

  • J. Jang, S. Choi, S. Jang, S. Ham, and G. Wang, "The development of statistical uniformity and reliability of artificial synaptic device for neuromorphic system" (poster)

  • S. Ham, M. Kang, S. Jang, j. Jang, S. Choi, T.-W. Kim, G. Wang* "One-dimensional organic artificial synapse based on the ferroelectric organic transistor for wearable neuromorphic applications" (Poster)

  • H. Cho, C.-W. Jeon, I.-K. Park, J. Jang, G. Wang* "Double Hydroxide for Unipolar Switching Memory Application" (Poster)

NANO KOREA (2020), KINTEX + Online hybrid conference, Ilsan, Korea, July.01(Wed)- July.03(Fri)

  • S. Choi, J.-W Choi, J. Shin, S. Jang, N.-D. Kim, J. Kwag and G. Wang* “Barristor-based SiOx Crossbar Array Inspired by the Vision System for Neuromorphic Computing” (Poster, Best Poster Award)

  • S. Ham, M. Kang, S. Jang, j. Jang, S. Choi, T.-W. Kim, G. Wang* "Fiber-shaped organic artificial multi-synapses enabling electronic-textile neural network for wearable neuromorphic applications" (Poster)

  • H. Cho, C.-W. Jeon, I.-K. Park, J. Jang*, G. Wang* "Transparent two-dimensional layered double hydroxide for resistive switching application"(Poster)

  • J. Shin, S. Yang, Y. Jang, J. S. Eo, T.-W. Kim, T. Lee, C.-H. Lee, and G. Wang* "Highly Tunable Molecular Rectifier Realized by Interfacial Design in Molecular Heterojunction with Two-Dimensional Materials" (Poster)

  • J. S. Eo, J. Shin, G. Wang* "Tunable rectification direction in molecualr heterojunction with two-dimensional semiconductors" (Poster)

  • J. Jang, S. Choi, S. Jang, S. Ham, and G. Wang* "Titanium oxide-based memristor array for artificial neural network system" (Poster)

 

KCS (2020), High1 Resort, Korea, Feb.12 (Wed)- Feb.14(Fri), 2020

  • J. Shin, S. Yang, Y. Jang, T.-W. Kim, T. Lee, C.-H. Lee, and G. Wang* “Highly Tunable Molecular Rectifier Realized by Interfacial Design in Molecular Heterojunction with Two-Dimensional Materials” (Oral)

  •  S. Choi, J.-W. Choi, J. Shin, S. Jang, N.-D. Kim, J. Kwag and G. Wang* "SiOx Memristor Synapse Inspired by the Visual System for Neuromorphic Computing" (Oral)

  • J. Jang, S. Choi, S. Jang, S. Ham, and G. Wang* "Achievement of uniform passive matrix synaptic array device architecture toward superb neuromorphic calculating system" (Oral)

  • S. Jang, S. Jang, E.-H. Lee, M. Kang, T.-W. Kim, and G. Wang* “Free-standing Artificial Synapse based on Ferroelectric Organic Field-effect Transistor for Wearable Neuromorphic Computing Systems” (Poster)

  • H. Cho, C.-W. Jeon, J. Jang, S. Choi, I.-K. Park, G. Wang* "Two-dimensional and Transparent Layered Double Hydroxide for Unipolar Switching Memory Application" (Oral)

  • S. Ham, M. Kang ,S. Jang ,J. Jang ,S. Choi , T.-W. Kim ,and G. Wang* "One-dimensional (1D) Artificial Multi-synapses based on Ferroelectric Organic Transistor for Wearable Neuromorphic Textile Applications" (Oral)

 

ICAMD (2019), Ramada Plaza Jeju Hotel, Korea, Dec.10(Tue)- Dec.13(Fri), 2019

 

  • S. Choi, J.-W. Choi, J. Shin, S. Jang, N.-D. Kim, J. Kwag and Gunuk Wang* “Controllable SiOx Memristor Synapse Inspired by the Human System for Neuromorphic Computation” (Poster, Best Poster Award)

  • H. Cho, C.-W. Jeon, J. Jang, S. Choi, I.-K. Park and G. Wang* "Nonvolatile Resistive Memory Realized by the Morphological Control of Two-Dimensional Layered Double Hydroxide" (Poster, Best Poster Award)

  • S. Ham, M. Kang, S. Jang, J. Jang, S. Choi, T.-W. Kim, G. Wang* "Fiber-shaped ferroelectric organic material based artificial synapse for wearable neuromorphic applications" (Poster)

  • J. Shin, S. Yang, Y. Jang, T.-W. Kim, T. Lee, C.-H. Lee, and G. Wang* “Highly Tunable Molecular Rectifier Realized by Interfacial Design in Molecular Heterojunction with Two-Dimensional Materials” (Poster)

  • J. Jang, S. Choi, S. Jang, S. Ham, and G. Wang* "Highly improved analogue switching properties of artificial synaptic device for neuromorphic computing" (Poster)

  • S. Jang, S. Jang, E.-H. Lee, M. Kang, T.-W. Kim, and G. Wang* "Free-standing Artificial Synapse based on Ferroelectric Organic Field-effect Transistor for Wearable Neuromorphic Computing Systems" (Poster)

 

한국복합재료학회 추계 (2019), Changwon Exhibition Convention Center, Changwon, Korea, Dec.04(Wed)-Dec.05(Thr), 2019.

 

  • S. Choi, J.-W. Choi, J. Shin, S. Jang, N.-D. Kim, J. Kwag and G. Wang* “Gate-tunable SiOx Artificial Synapses Inspired by Human Visual System for Neuromorphic Computing” (Oral)

  • S. Ham, M. Kang, S. Jang, J. Jang, S. Choi, T.-W. Kim, G. Wang* "Flexible one-dimensional organic artificial multi-synapses for wearable neuromorphic electronic applications" (Oral)

 

Materials Research Society Fall Meeting (2019), Boston, MA, USA, Dec.1-Dec.6, 2019

 

  • H. Cho, C.-W. Jeon, J. Jang, S. Choi, I.-K. Park and G. Wang* "Nonvolatile Resistive Memory Realized by the Morphological Control of Two-Dimensional Layered Double Hydroxide" (Oral)

  • S. Jang, S. Jang, E.-H. Lee, M. Kang, T.-W. Kim, and G. Wang*  "Free-standing Artificial Synapse based on Ferroelectric Organic Field-effect Transistor for Wearable Neuromorphic Computing Systems" (Poster)

한국전기전자학회 (2019), "인공지능 하드웨어 구현을 위한 Neuromorphic 기초/소자/회로/알고리즘/응용 기술 강좌" Korea University, Nov. 01 (Fri.)

 

  • G. Wang "차세대인공시냅스 소자 및 이슈" (Invited lecture)

한국재료학회 추계 (2019), Sol Beach Hotel & Resort, Samcheok, Korea, Oct.30(Wed)-Nov.1(Fri), 2019

  • G. Wang "Photonic and Probabilistic Artificial Synapses for Energy-efficient Neuromorphic Application" (Invited talk)

  • S. Ham, M. Kang, S. Jang, J. Jang, T.-W. Kim, G. Wang* “Fiber-shaped organic artificial synapse based on the ferroelectric organic transistor for wearable neuromorphic applications” (Poster)

  • H. Cho, C.-W. Jeon, J. Jang, I.-K. Park, G. Wang* "Development of Two-dimensional Layered Double Hydroxide for Unipolar Switching Memory Application" (Oral)

2019 KPS Fall Meeting, Kimdaejung Convention Center, Gwangju, Korea, Oct.23(Wed)-Oct.25(Fri)

  • J. Shin, S. Yang, Y. Jang, T.-W. Kim, T. Lee, C.-H. Lee, and G. Wang* “Highly Tunable Molecular Rectifier Realized by Interfacial Design in Molecular Heterojunction with Two-Dimensional Materials” (Oral)

  • S. Jang, S. Jang, E.-H. Lee, M. Kang, T.-W. Kim, G. Wang* "Free-standing artificial synapse based on the ferroelectric organic field-effect transistor for wearable neuromorphic computing systems" (Oral)

  • S. Ham, M. Kang, S. Jang, J. Jang, S. Choi, T.-W. Kim, G. Wang* "Fiber-shaped artificial synapses based on the ferroelectric organic transistor for wearable neuromorphic applications" (Oral)

  • H. Cho, C.-W. Jeon, J. Jang, I.-K. Park, and G. Wang* "Development of Two-dimensional Layered Double Hydroxide for Unipolar Switching Memory Application" (Oral)

  • S. Choi, J.-W. Choi, J. Shin, S. Jang, N.-D. Kim, J. Kwag, and G. Wang* "Gate-tunable SiOx Memristor Synapse Inspired by the Human Visual System for Neuromorphic Computation" (Best Poster Award))

237th ECS meeting (2019), Atlanta, USA, Oct. 13-17, 2019

  • G. Wang "Probabilistic Si Synapses for Energy-efficient Neuromorphic Application" (Oral) 

IDC-NICE (2019), Hokkaido Univ, Sapporo, Japan, Oct. 09-12, 2019

  • G. Wang "Photonic and Probabilistic Artificial Synapses for Energy-efficient Neuromorphic Application" (Invited Talk) 

SSDM (2019), Nagoya Univ., Japan, Sep. 2 (Mon)- Sep. 5 (Thu), 2019

  • S. Ham, M. Kang, S. Jang, J. Jang, T.-W. Kim and G. Wang, "Organic material-based artificial synaptic device for neuromorphic applications" (Oral)

  • J. Shin, S. Yang, C.-H. Lee, G. Wang* "Highly controllable molecular rectifier realized by interfacial design in molecular heterojunction with two-dimensional materials" (Oral)

 

한국센서학회 추계 (2019), The Lakaisandpine Resort, Gangneung, Korea, August 28 (Wed)- August 30 (Fri), 2019

  • J. Jang, S. Choi, S. Jang, S. Ham, and G. Wang* "The development of recognition accuracy of neuromorphic sensor system with uniform and stable analogue switching synaptic device array" (Poster)

  • J. Shin, K. Gu, S. Yang, C.-H. Lee, T. Lee, Y. H. Jang, and G. Wang* "Correlational Effects of the Molecular-Tilt Configuration and the Intermolecular van der Waals Interaction on the Charge Transport in the Molecular Junction" (Poster)

INPEC (2019), Taiyuan Univ. China, Aug.18-22

  • G. Wang "Photonic and Probabilistic Artificial Synapses for Energy-efficient Neuromorphic Application" (Invited Talk) 

삼성 미래기술 연구회 (2019), 삼성화재본관, Aug.08

  • G. Wang "저전력 인공지능을 위한 뉴로모픽 하드웨어 기술" (Invited Lecture) 

IKEEE (2019), Korea University, Seoul, Korea, Aug 8 (Thu)- Aug 9 (Fri), 2019

  • J. Shin, S. Yang, Y. Jang, T.-W. Kim, T. Lee, C.-H. Lee*, and G. Wang* “Two-Dimensional Semiconductor as a Rectifying Designer in a Non-Functionalized Molecular Junction” (Poster)

  • H. Cho, C.-W. Jeon, J. Jang, I.-K. Park, G. Wang* "Nonvolatile Resistive Memory realized by the morphological Control of Two-dimensional Layered Double Hydroxide" (Poster)

  • S. Ham, M. Kang, S. Jang, J. Jang, T.-W. Kim*, G. Wang* "One-dimensional (1D) artificial multi-synapses based on ferroelectric organic transistor for wearable neuromorphic applications" (Poster)

  • S. Jang, S. Jang, E.-H. Lee, M. Kang, T.-W. Kim, G. Wang* "Development of an artificial synapse based on ferroelectric organic field-effect transistor for wearable neuromorphic application" (Poster)

  • S. Choi, J.-W. Choi, J. Kwak, J. Shin, S. Jang, N.-D. Kim, J. Kwag and Gunuk Wang* "Gate-tunable SiOx Artificial Synapse Inspired by Human Visual System for Energy-efficient Neuromorphic Computation" (Oral, Best Oral Award)

  • J. Jang, S. Choi, G. Wang* "Ultra-stable analog switching synaptic device for highly accurate neuromorphic calculation" (Oral)

NANO KOREA (2019), KINTEX, Ilsan, Korea, July.03(Wed)- July.05(Fri)

  • S. Choi, J.-W Choi, J. Kwak, J. Shin, S. Jang, N.-D. Kim, J. Kwag and G. Wang* “Bio-inspired gate-tunable SiOx artificial synapses imitating rod-to-rod bipolar synapses” (Poster)

  • J. Shin, S. Yang, C.-H. Lee, and G. Wang* “Highly Controllable Molecular Rectifier Realized by Interfacial Band Alignment in Molecular Heterojunction with Two-Dimensional Materials” (Oral)

  • Seonghoon Jang, Sukjae Jang, Eun-Hye Lee, MinJi Kang, Tae-Wook Kim and Gunuk Wang* "Development of an artificial synapse based on ferroelectric organic field-effect transistor for wearable neuromorphic applications" (Oral)

  • S. Ham, M. Kang, J. Jang, T-W. Kim, G. Wang* “Fiber-shaped artificial synapse based on ferroelectric organic transistor for wearable neuromorphic applications” (Poster)

 

물리학회 부울경지부 워크샵 (2019), 울산대학교, Jun.28

  • G. Wang "뉴로모픽 컴퓨팅을 위한 인공시냅스" (Invited Tutorial) 

KIEEME Annual Summer Conference 2019, Welli Hilli Park, Gangwon-do, Korea, Jun.19(Wed)-Jun.21(Fri), 2019

  • J. Shin, S. Yang, T. Lee, C.-H. Lee, and G. Wang* “Highly Controllable Molecular Rectifier Realized by Interfacial Band Alignment in Molecular Heterojunction with Two-Dimensional Materials” (Oral)

  • H. Cho, C.-W. Jeon, J. Jang, I.-K. Park, G. Wang* "Development of 2D resistive memory devices using a ZnAl-layered double hydroxide" (Poster)

The 22nd International Conference on Solid State Ionics (SSI-22) (2019), Alpensia Resort, Pyeongchang, Korea, June 16 (Sun)-June 21(Fri), 2019

  • S. Choi, J.-W. Choi, J. Kwak, J. Shin, S. Jang, N.-D. Kim, J. Kwag and G. Wang* "Development of gate-tunable SiOx memristive synapse inspired by rod-to-rod bipolar synapse of the biological visual system" (Oral).

  • S. Jang, S. Jang, E.-H. Lee, M. Kang, T.-W. Kim, and G. Wang* "Development of an artificial synapse based on ferroelectric organic field-effect transistor for wearable neuromorphic applications" (Oral)

  • S. Ham, M. J. Kang, J. Jang, T.-W. Kim, G. Wang* "Fiber-shaped artificial synapse based on ferroelectric organic neuromorphic transistor for wearable neuromorphic applications" (Poster)

MRS-K spring Meeting (2019), Alpensia Resort, Pyeongchang, Korea, May.15(Wed)-May.17(Fri)

  • S. Jang, S.Jang, E.-H. Lee, M. Kang, T.-W. Kim, and G. Wang* "Development of an artificial synapse based on the ferroelectric organic field-effect transistor for wearable neuromorphic applications" (Best Oral Award)

IC ME&D (2019), Paradise Hotel Busan, Busan, Korea, May 9 (Thu)-May 10 (Fri), 2019

  • J. Shin, S. Yang, T. Lee, C.-H. Lee, and G. Wang* “Highly Controllable Molecular Rectifier Realized by Interfacial Band Alignment in Molecular Heterojunction with Two-Dimensional Materials” (Oral)

  • J. Jang, J. H. Park, and G. Wang* "Temporary data storage devices using the self-erasable property" (Poster)

KPS Spring Meeting (2019), Daejeon Convention Center, Daejeon, Korea, Apr.24(Wed)-Apr.26(Fri)

  • J. Shin, S. Yang, C.-H. Lee, and G. Wang* “Programmable molecular rectifier driven by the interfacial band alignment between 2D semiconductor and the self-assembled monolayers” (Poster)

  • S. Ham, M. Kang, J. Jang, T-W. Kim, G. Wang* “Fiber-shaped organic artificial synapse for wearable neuromorphic applications” (Best Poster Award)

  • H. Cho, C.-W Jeon, J. Jang, I.-K Park, G. Wang* “Transparent 2D memory based on a ZnAl-Layered Double Hydroxide” (Poster)

  • S. Choi, J.-W Choi, J. Kwak, J. Shin, N.-D. Kim and G. Wang* “Development of gate-tunable SiOx memristive synapse inspired by rod-to-rod bipolar synapse of the biological visual system” (Best Oral Award)

인공지능형 반도체 기술 워크샵 (2019), 서울교육대학교 전산관, Apr.19

  • G. Wang "인공 시냅스 소재 및 소자" (Invited Lecture) 

American Physical Society (APS) 2019, Boston Convention and Exhibition Center (BCEC), USA, Mar. 4(Mon)-Mar.9(Fri)

 

  • S. Ham, S. Choi, H. Cho, and G. Wang “Low-power photonic organolead halide perovskite artificial synapse inspired by dopamine-facilitated synaptic activity" (Oral)

  • J. Shin, S. Yang, C.-H. Lee, and G. Wang “Programmable molecular-scale diode based on standard molecules/2D semiconductor hybrid molecular junction” (Oral)

  • S. Choi, S. Jang, J.-H. Moon, J. C. Kim, H. Y. Jeong, P. Jang, K.-J. Lee, and G. Wang "Development of Self-rectifying TaOy/Nanoporous TaOx Memristor Synapse for Suppressing Non-neural Signal in the Large-scale Neuromorphic Array System" (Oral)

 

Future Integrated Technology (미래융합기술 심포지움/아카데미) (2019), Peyto Hotel, Seoul, Korea, Feb.18-Feb. 22

 

  • G. Wang "Advance in Neuromorphic Hardware: From Emerging Materials to Devices" (Invited Lecture) 

 

The 26th Korean Conference on Semiconductor (KCS) (2019), Welli Hilli Park, Gangwon-do, Korea, Feb.13(Wed)-Feb.15(Fri)

 

  • G. Wang "Organic-based artificial synapse for learning- and energy-efficient neuromorphic system" (Invited) 

  • J. Shin, S. Yang, C.-H. Lee, and G. Wang “Programmable molecular-scale diode based on standard molecules/2D semiconductor hybrid molecular junction(Best Poster Award)

  • S. Choi, S. Jang, J.-H. Moon, J. C. Kim, H. Y. Jeong, P. Jang, K.-J. Lee, and G. Wang "Development of Self-rectifying TaOy/Nanoporous TaOx Memristor Synapse for Suppressing Non-neural Signal in the Large-scale Neuromorphic Array System" (Oral)

  • S. Ham, S. Choi, H, Cho and G. Wang "Low-power photonic organolead halide perovskite artificial synapse inspired by dopamine-facilitated synaptic activity" (Oral, Best Student Award)

 

Nano Convergence Conference (NCC) 2019, Elysian Gangchon, Gangchon, Korea, Jan.17(Thu)-Jan.18(Fri)

 

  • J. Shin, S. Yang, C.-H. Lee, and G. Wang “Programmable molecular-scale diode based on standard molecules/2D semiconductor hybrid molecular junction(Best Poster Award)

  • S. Choi, S. Jang, J.-H. Moon, J. C. Kim, H. Y. Jeong, P. Jang, K.-J. Lee, and G. Wang "Development of Self-rectifying TaOy/Nanoporous TaOx Memristor Synapse for Suppressing Non-neural Signal in the Large-scale Neuromorphic Array System" (Poster)

  • S. Ham, S. Choi, H, Cho and G. Wang "Low-power photonic organolead halide perovskite artificial synapse inspired by dopamine-facilitated synaptic activity" (Oral)

2017-2018

Best Oral Awards : 4

Best Poster Awards: 4

KPS Fall Meeting (2018), Changwon Exhibition Convention Center, Changwon, Korea, Oct.24(Wed)-Oct.26(Fri)

 

  • G. Wang "Organic-based artificial synapse for learning-efficient and flexible neuromorphic system" (invited)

  • J. Shin, S. Yang, C.-H. Lee, and G. Wang "Programmable Molecular-Scale Diode Driven by Interfacial Properties of Self-Assembled Monolayer and 2D Semiconducting Materials" (Best Poster Award)

  • S. Choi, S. Jang, J.-H, Moon, J. C. Kim, H. Y. Jeong, P. Jang, K.-J. Lee, and G. Wang "Self-rectifying bilayer Ta2O5/Nanoporous Ta2O5-x Artificial Synaptic Device for High-Accuracy Pattern Recognition"

  • S. Ham, S. Choi, H. Cho and G. Wang "Low-power Photonic Organolead Halide Perovskite Artificial Synapse Inspired by Dopamine-facilitated Synaptic Activity(Best Poster Award)

  • J. Choi, N. Kim, and G. Wang "Vertically Integrated Gate-tunable SiOx memristor for memory and programmable logic application"

  • H. Cho, and G. Wang "Development of two-dimensional WO3·H2O nanosheet for neuromorphic device applications"

 

 

IDC-NICE (2018), Haeundae Centum Hotel, Busan, Korea, Oct.10 - Oct.12

 

  • G. Wang "CHARGE TRANSPORT IN THE MOLECULAR JUNCTION; CORRELATIONAL EFFECTS OF THE MOLECULAR-TILT CONFIGURATION AND THE INTERMOLECULAR VAN DER WAALS INTERACTION” (invited)

 

 

INPEC (2018), Ewha University, Seoul, Korea, Aug.27(Mon)- Aug.29(Wed)

 

  • G. Wang "Nanoporous Oxide Memristive System & Artificial Synapses for NextGeneration Electronic Device Application” (invited)

  • S. Choi, S. Jang, J.-H, Moon, J. C. Kim, H. Y. Jeong, P. Jang, K.-J. Lee, and G. Wang "Self-rectifying Nanoporous Ta2O5-x Synaptic Device for High Recognition Accuracy in Artificial Neural Network"

  • J. Choi, J. Kwak, S. Choi, J. Shin, N.D Kim and G. Wang* “Vertically Integrated Gate-tunable SiOx memristor for memory and programmable logic application” 

 

NANO KOREA (2018), KINTEX, Ilsan, Korea, July.11(Wed)- July.13(Fri)

 

  • S. Choi, S. Jang, J.-H, Moon, J. C. Kim, H. Y. Jeong, P. Jang, K.-J. Lee, and G. Wang "Self-rectifying Nanoporous Ta2O5-x Synaptic Device for High Recognition Accuracy in an Artificial Neural Network" (*Oral)

  • J. Choi, N.D Kim and G. Wang* “Tunable, High-Performance Switching in Silicon-Oxide(SiOx) Memristor Enabled by a Vertically Integrated Graphene Barristor

  • S.-G. Ham, H. Cho, and G. Wang* "Photo-tunable organolead halide perovskite (OHP) synaptic device for neuromorphic device applications." (*Oral)

  • J. Shin, K. Gu, S. Yang, C.-H. Lee, T. Lee, Y. H. Jang, and G. Wang "A programmable molecular-scale rectifier driven by the Interface-engineered molecular junction consisting of the 2D semiconducting layer and the self-assembled monolayers" (*Oral)

 

60th Electronic Materials Conference (2018), University of California, Santa Babara, CA, USA, June.27(Wed)- June.29(Fri)

 

  • J. Shin, K. Gu, S. Yang, C.-H. Lee, T. Lee, Y. H. Jang, and G. Wang "A programmable molecular-scale rectifier driven by the Interface-engineered molecular junction consisting of the 2D semiconducting layer and the self-assembled monolayers" (*Oral)

 

한국전기전자학회 (2018), "인공지능 하드웨어 구현을 위한 Neuromorphic 기초/소자/회로/알고리즘/응용 기술 강좌" Korea University, May. 11 (Thu.)

 

  • G. Wang "신소재 및 인공 시냅스 소자 구조 관점에서 본 뉴로모픽 하드웨어의 발전" (invited lecture)

 

KPS Spring Meeting (2018), Daejeon Convention Center, Daejeon, Korea, Apr.25(Wed)- Apr.27(Fri)

 

  • J. Shin, S. Yang, C.-H. Lee, and G. Wang "A programmable molecular-scale rectifier driven by the interface-engineered molecular junction consisting of the 2D semiconducting layer and the self-assembled monolayers" (*Oral, Best Oral Award)

  • S.-G. Ham, H. Cho, and G. Wang* "Two-terminal organolead halide perovskite (OHP) synaptic device for neuromorphic device applications" (*Oral, Best Oral Award)

  • S. Choi, S. Jang, J.-H. Moon, P. Jang, K.-J. Lee, J. C. Kim, H. Y. Jeong and G. Wang* "Self-rectifying Nanoporous Ta2O5-x Synaptic Device for High Recognition Accuracy in an Artificial Neural Network" (*Oral)

  • J. Choi, N.D Kim and G. Wang* “Tunable, High-Performance Switching in Silicon-Oxide(SiOx) Memristor Enabled by a Vertically Integrated Graphene Barristor(*Oral, Best Oral Award)
     

 

KCS (2018), High-one Resort Convention Hotel, Gangwon-do, Korea, Feb. 5(Mon.)-Feb. 7(Wed.)

 

  • J. Shin, S. Yang, C.-H. Lee, and G. Wang* "Molecular-scale rectifier employing hybrid junction architecture consisting of the 2D semiconducting materials and the standard molecules" (*Oral)

  • S.-G. Ham, H. Cho, and G. Wang* "Two-terminal organolead halide perovskite (OHP) synaptic device for neuromorphic device applications" (*Oral)

  • S. Choi, S. Jang, J.-H. Moon, P. Jang, K.-J. Lee, J. C. Kim, H. Y. Jeong and G. Wang* "Self-rectifying Nanoporous Ta2O5-x Memristive Device for Neuromorphic Device Applications"

  • J. Choi,  N.D Kim and G. Wang* “Gate-tunable silicon oxide memory based on vertically integrated graphene barristor” 

 

NCC (2018), Yangjae aT center, Seoul, Korea, Jan.10(Wed)- Jan.11(Thu)

 

  • J. Shin, S. Yang, C.-H. Lee, and G. Wang* "Molecular-scale rectifier employing hybrid junction architecture consisting of the 2D semiconducting materials and the standard molecules" (*Oral)

  • S. Kwon, S. Jang, J. Choi, S. Choi, S. Jang, T.-W. Kim* and G. Wang* "Ultrafast and scalable SiOx memory by controllably conductive filament fabricated via well-defined sub-10 nm single nanopore structure"(*Oral)

  • S. Ham and G. Wang* “Two-terminal organolead halide perovskite (OHP) synaptic device for neuromorphic device applications

  •  S. Jang, S. Choi, J.-H. Moon, P. Jang, K.-J. Lee and G. Wang* "Self-rectifying Nanoporous Ta2O5-x Memristive Device for Neuromorphic Device Applications"

 

 ICAMD (2017), Ramada Plaza Jeju Hotel, Korea, Dec.5(Tue)- Dec.9(Fri)

 

  • S. Jang, S. Jang, T. Kim and G. Wang* “Development of an artificial synapse based on ferroelectric organic field-effect transistor for wearable neuromorphic applications” 

  • S. Ham and G. Wang* “Morphology-dependent Switching Property of Organolead Halide Perovskite Memory Device

  • J. Shin, S. Yang, C.-H. Lee, and G. Wang* "Molecular-scale rectifier employing a hybrid junction from a two-dimensional semiconducting layer (MoS2) and a conjugate-based molecule"

  • J. Choi, N. Kim, and G. Wang* “Gate-tunable silicon oxide memory based on vertically integrated graphene barristor

 

KPS Fall Meeting (2017), Gyeongju Hwabeak International Convention Center, Gyeongju, Korea, Oct.25(Wed)- Oct.27(Fri)

 

  • S. Ham and G. Wang* “Morphology-dependent Switching Property of Organolead Halide Perovskite Memory Device” 

  • S. Jang and G. Wang*“Development of an artificial synapse based on ferroelectric organic field-effect transistor for wearable neuromorphic applications(*Best Poster Award)

  • J. Choi,  N.D Kim and G. Wang* “Gate-tunable silicon oxide memory based on vertically integrated graphene barristor” 

  • J. Shin, S. Yang, C. Lee and G. Wang* “Interfacial tunneling barrier modulation governed by molecular-tilt configuration and van der Waals interaction in graphene/oligophenylene thiol/Au junction

 

KPS Spring Meeting (2017), Daejeon Convention Center, Daejeon, Korea, Apr.19(Wed)- Apr.21(Fri)

 

  • G. Wang, "Nanoporous Oxide Memristive System for Next Generation Nonvolatile Memory Application"(*Invited)

  • W. Huh1, S. Jang1, J. Y. Lee, H. Y. Jeong, G. Wang*, and C.H. Lee* "Gate-Tunable 2D Memristor Devices Based on Monolithically-Integrated Vertical Heterojunction"(*Best Poster Award)

  • S. Kwon and G. Wang* “A fast and scalable silicon oxide resistive memory with tunable and well-defined single nanopore structure” (*Oral, Best Oral Award)

  • J. Shin and G. Wang* “Effect of Molecular Tilt Configuration on Charge Transport in Molecular Junction with Different Contact Coupling

  • S. Jang and G. Wang* “Self-rectifying Nanoporous Ta2O5-x Memristive Device for Neuromorphic System(*Oral, Best Oral Award)

  • S. Ham and G. Wang* “Dependence of Metal Electrode on Switching Polarity of Organolead Halide Perovskite Memory Device

 

KCS (2017), Daemyung Resort, Gangwon-do, Korea, Feb. 13-Feb. 15.

 

  • S. Jang and G. Wang* "Asymmetric Nanoporous Ta2O5-x Memristor for Neuromorphic System(*Oral)

  • S. Kwon and G. Wang* "Single nanoporous structure-based silicon oxide memory"

2015-2016

KPS Fall Meeting (2016), Kimdaejung Convention Center, Gwangju, Korea, Oct. 17-Oct. 20. 

  • S. Kwon and G. Wang* "Single Nanoporous Silicon Oxide Memory"

  • S. Jang and G. Wang* "Asymmetric Nanoporous Ta2O5-x Memristor for Neuromorphic System"

 

  • G. Wang, “Silicon oxide-based memory and three-dimensional nanoporous system for ultrahigh density storage” Pacific  Rim Meeting on Electrochemical and Solid-state Science (2016), Honolulu, HI, USA, Oct.02-Oct.07 (*Invited)

  • G. Wang, “Silicon oxide-based memory and three-dimensional nanoporous system for ultrahigh density storage” The Korean Society Industrial and Engineering Chemistry (2016), Yeosu, Korea May.02-May.04, 2016.  (*Invited)

  • G. Wang, “Silicon oxide-based memory and three-dimensional nanoporous system for ultrahigh density storage” The 23th Korean Conference on Semiconductors (2016), Hiwon resort, Gangwondo, Korea Feb.22-Feb.24, 2016. (*Invited)

  • G. Wang, “Development of Silicon Oxide Resistive & Nanoporous Memory System”  The 26th International Conference on Molecular Electronics and Devices (2015), Hiwon resort, Gangwondo, Korea Feb.22-Feb.24, 2016. (*Invited)

 

BEFORE 2015
BEFORE 2015
SELECTED
  • G. Wang et al., “Development of Silicon Oxide Resistive Memory System for Future Nonvolatile Memory Application” Materials Research Society Fall Meeting (2014), Boston, MA, USA, Nov.30-Dec.5, 2014.

  • G. Wang et al., "Investigation of the Transition Voltage Spectra of Molecular Junctions Considering Frontier Molecular Orbitals and the Asymmetric Coupling Effect",  International Conference on Nano Science and Nano Technology 2011, Sunchon National Univ., Korea, Nov. 10-11, 2011.

  • G. Wang et al., "Graphene interlayer-based molecular junctions for high yield and reliable device applications", 2011 IEEE Nanotechnology Materials and Devices Conference, Jeju, Korea, Oct. 18-21, 2011.   [Best Poster Award]

  • G. Wang et al "New approach for molecular electronic junctions with multi-layer graphene electrode", 22nd IC-ME&D (22nd International Conference on Molecular Electronics and Devices), POSTECH, Pohang, Korea, May 19-20, 2011.

  • G. Wang et al., "Effect of molecular tilt configuration and interface dipoles on molecular electronic conduction ", Electronic Materials Conference 2010, Univ. of Norte Dame, South Bend, IN, USA, June 23-25, 2010.  [Student oral presentation]

  • G. Wang et al., “Enhancement of Field Emission Transport by Molecular Tilt Configuration in Metal-Molecule-Metal Junctions”, International conference of nanoscience and nanotechnology 2009, Mokpo Nat. Univ. Gwangju, Korea, Nov. 5-6, 2009.  [Best Poster Award]

  • G. Wang et al., "Enhancement of Field Emission Transport by Molecular Tilt Configuration in Metal-Molecule-Metal Junctions", 20th IC-ME&D (20th International Conference on Molecular Electronics and Devices), Sogang Univeristy, Seoul, Korea, May 22-23, 2009.

  • G. Wang et al., "Effect of metal-molecule contact, molecular structure, and molecular configuration on molecular electronics conduction",The 8th International Conf. on Nano-Molecular Electronics, Kobe, Japan, Dec. 16-18, 2008.

  • G. Wang et al.,“Effect of Metal-Molecule Contact, Molecular Structure, and Molecular Configuration on Molecular Electronic Conduction”, 2008 추계 한국물리학회, KDJ Center, Gwangju, Korea Oct. 23-24, 2008.

  • G. Wang et al., "Effect of Metal-Molecule Contact, Molecular Structure, and Molecular Configuration on Molecular Electronic Conduction Studied by Multi Barrier Tunneling Model", Electronics Materials Conference 2008,University of California at Santa Barbara, USA, June 25-27, 2008. [Student oral presentation]

  • G. Wang et al., "Effect of Metal-Molecule Contact, Molecular Structure, and Molecular Configuration on Molecular Electronic Conduction Studied by Multi-Barrier Tunneling Model", 19th IC-ME&D (19th International Conference on Molecular Electronics and Devices), Ajou Univeristy, Suwon, Korea, May 29-30, 2008.

  • G. Wang et al., "The Influence of Metal-Molecule Contacts on Decay Coefficients and Specific Contact Resistances in Molecular Junctions Studied by Multi-Barrier Tunneling Model", Materials Research Society Fall Meeting (2007), Boston, MA, USA, Nov. 26-30, 2007.

  • G. Wang et al.,"Effect of Metal-Molecule Contacts in Molecular Junctions Studied by Multi-Barrier Tunneling Model", GJ-NST 2007 (International conference of nanoscience and nanotechnology 2007), Gwangju, Korea, Nov. 8-9, 2007.

  • G. Wang et al., "Charge transport through alkyl self-assembled monolayers: Metal-molecule contact studied by multi-barrier tunneling model", Korea-Japan Join Forum 2007, Korea Univ., Sept. 27-29, 2007.

  • G. Wang et al., "Charge Transport through Alkyl Self-Assembled Monolayers: Metal-Molecule Contacts Studied by Multi-Barrier Tunneling Model", 18th International Conference on Molecular Electronics and Devices 2007, ETRI, Daejeon, Korea, May 10-11, 2007. [Best Poster Award]

  • G. Wang et al.,“Electronic transport in molecular scale devices from multi-barrier tunneling model”, Oragnic electronics workshop, Sunchon National University, Korea, Feb. 21-22, 2007

  • G. Wang et al., et al., "Electronic Transport of Alkanemonothiol versus Alkanedithiol Metal-Molecule-Metal Junctions Studied by a Multi-Barrier Tunneling Model ", GJ-NST 2006 (International conference of nanoscience and nanotechnology 2006), Gwangju, Korea, Dec. 7-8, 2006

  • G. Wang et al., "Electronic transport of alkanemonothiol versus alkanedithiol metal-molecule-metal junctions studied by a multi-barrier tunneling model", Asian Conference on Nanoscience and Nanotechnology 2006, Busan, Korea, Nov. 1-4, 2006

  • G. Wang et al., "Length-Dependent Electronic Transport through Alkane-Dithiol Self-Assembled Monolayer Junctions", IEEE Nanotechnology Materials Devices Conference 2006, Gyeongju, Korea, Oct. 22-25, 2006.

 

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